曾辉，1987年6月生，河南信阳人，中共党员，副教授，新能源材料与器件系主任。厦门大学博士，武汉大学硕士，湖南大学、南方科技大学等访问学者，并荣获2024年“优秀国内访问学者”等称号。专业方向主要带头人，全国本科毕业论文（设计）抽检评审专家库专家，湖南省量子科技学会会员。目前主持（在研）省自然科学基金、省教育厅优秀青年基金各1项，参与国家自然科学基金、省自然科学基金、省教育厅重点、省教改项目多项。在ACS Appl. Nano Mater.、J. Phys. D: Appl. Phys.、Front. Phys.、Eur. Phys. J. Plus、Appl. Phys. Express等期刊发表SCI论文20余篇，CSCD中文核心1篇，专利1项。Physica Status Solidi-Rapid Research Letters, Computational Condensed Matter、Materials Science and Engineering B等期刊的审稿人。多次指导学生在大学生物理竞赛获奖。研究领域：宽禁带半导体电输运；光电流效应

近期学术论文：

[1] H. Zeng*, C. Ma, Y. Xue, M. Wu*, P-type Ca-doped two-dimensional Ga₂O₃ with strain-modulated high hole mobility and anisotropy J. Phys. D: Appl. Phys. 58 385101 (2025).

[2] H. Zeng*, C. Ma, M. Wu*, Compressively Strained p-Type Mg-Doped Two-Dimensional Ga₂O₃ with a Direct Band Gap and Anisotropic Hole Mobility ACS Appl. Nano. Mater. 8 10004 (2025).

[3] H. Zeng*, X. Fu*, G. Liang, J. Lin, W. Liao, L. L i, Point defect improved linear and elliptical photogalvanic effects in a BSi₃ photo-detector Eur. Phys. J. Plus 140 823 (2025).

[4] H. Zeng*, C. Ma, L. Hui, Y. Xue, M. Wu*, Exploring the structural, electronic, and transport properties in thickness-dependent two-dimensional Ga₂O₃ induced by native defects Nanotechnology 36 405703 (2025).

[5] H. Zeng*, C. Ma, Y. Xue, M. Wu*, 2025 Roles of oxygen vacancy in two-dimensional Ga₂O₃ tuned by biaxial strain Appl. Phys. A 131 827 (2025).

[6] H. Zeng*, M. Wu*, C. Ma, X. Fu, H. Gao, Tunable electronic, transport, and optical properties of fluorine- and hydrogen-passivated two-dimensional Ga₂O₃ by uniaxial strain, J. Phys. D: Appl. Phys., 57 315105 (2024).

[7] H. Zeng*, C. Ma, M. Wu*, Ultra-high electron mobility in Sn-doped two-dimensional Ga₂O₃ modified by biaxial strain and electric field, Appl. Phys. Express, 17 081004 (2024).

[8] H. Zeng*, C. Ma, M. Wu*, Effective P-type N-doped α-Ga₂O₃ from First-Principles Calculations, J. Supercond. Novel Magn., 37 1017-1027 (2024).

[9] H. Zeng*, C. Ma, M. Wu*, Exploring the effective P-type dopants in two-dimensional Ga₂O₃ by first-principles calculations, AIP Adv., 14 055221 (2024).

[10] H. Zeng*, C. Ma, M. Wu*, High Electron Mobility in Si-Doped Two-Dimensional β-Ga₂O₃ Tuned Using Biaxial Strain, Materials, 17 4008 (2024).

[11] H. Zeng*, C. Ma, M. Wu*, Strain mediated ultra-high electron mobility in Ge-doped two-dimensional Ga₂O₃, AIP Adv., 14 085227 (2024).

[12] H. Zeng*, C. Ma, X. Li, X. Fu, H. Gao, M. Wu*, Roles of Impurity Levels in 3d Transition Metal-Doped Two-Dimensional Ga₂O₃, Materials, 17 4582 (2024).

[13] X. Fu, G. Liang, J. Lin, W. Liao, H. Zeng*, L. Li, X. Li, Linear and elliptical photogalvanic effects in two-dimensional Be₂Al photodetector, J. Mater. Sci.: Mater. Electron., 35 1131 (2024).

[14] H. Zeng*, M. Wu*, M. Chen, Q. Lin, Effects of Cu, Zn Doping on the Structural, Electronic, and Optical Properties of α-Ga₂O₃: First-Principles Calculations, Materials, 16 5317 (2023)

[15] H. Zeng*, M. Wu*, H. Gao, Y. Wang, H. Xu, M. Cheng, Q. Lin, Role of Native Defects in Fe-Doped β-Ga₂O₃, Materials, 16 6758 (2023)

[16] H. Zeng, M. Wu, Hui-Qiong Wang*, Jin-Cheng Zheng*, Junyong Kang, Tuning the magnetic and electronic properties of strontium titanate by carbon doping, Front. Phys., 16 43501 (2021).

[17] H. Zeng, M.W. H.-Q. Wang*, J.-C. Zheng*, and J. Kang, Tuning the Magnetism in Boron-Doped Strontium Titanate, Materials, 13 5686 (2020).